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I d i o d e = U I N − U O U T R Ω {displaystyle I{diode}={dfrac {U{IN}-U{OUT}}{R{Omega }}}} . Further reading[edit]. The Zener current after the reverse breakdown must be controlled by connecting a resistor R as shown in figure. V-I Characteristics of Zener Diode. The Zener diode's operation depends on the heavy doping of its p-n junction. TVS/Zener Theory and Design Considerations; ON Semiconductor; 127 pages; 2005; HBD854/D. In the reverse direction however there is a very small leakage currentbetween 0V and the Zener voltage. Tips and Tricks to Crack COMEDK Medical Tips and Tricks to Crack EAMCET Medical ..

After breakdown has occurred. Voltage shifter[edit]. An alternative, which is used for voltage references that need to be highly stable over long periods of time, is to use a Zener diode with a temperature coefficient (TC) of +2mV/C (breakdown voltage 6.26.3V) connected in series with a forward-biased silicon diode (or a transistor B-E junction) manufactured on the same chip.[3] The forward-biased diode has a temperature coefficient of 2mV/C, causing the TCs to cancel out. Zener diodes are widely used as voltage references and as shunt regulators to regulate the voltage across small circuits. Sweep DC source from 0V to 5V. The value ofVzcan be precisely controlled by controlling the doping levels of P and N regions at the time of manufacturing a Zener diode. Zener diodes have a highly doped p-n junction. References[edit]. For example, a diode with a Zener breakdown voltage of 3.2V exhibits a voltage drop of very nearly 3.2V across a wide range of reverse currents.

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